2021/06/09 by Timothy N. Camenzind, Camenzind, Timothy N., Elsayed, Asser +16 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2106.05254
openalex publication_date 2021/06/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.