Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems

2024/05/06 by Denis Aglagul, Jian Shi, Aglagul, Denis +1
Engineering · Materials Science · #Aluminum Alloy Microstructure Properties #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Silk-based biomaterials and applications #Solidification and crystal growth phenomena

paper · pdf · doi:10.48550/arxiv.2405.03156

openalex publication_date 2024/05/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present theoretical observations on the topological nature of strained III-V semiconductors. By k ⋅ p perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the Γ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.

Related

• The Strain Impact on Weyl Semimetals
• Effective conduction-band model for zincblende III-V semiconductors in the presence of strain: tuning the properties of bulk crystals and nanostructures
• Switching topological states via uniaxial strain in 2D materials
• Topological phase transitions in strained Lieb-Kagome lattices
• Strain-induced transformation of charge-density waves and mechanical anomalies in the quasi one-dimensional conductors TaS₃ and K_0.3MoO₃