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Stress in Spin-Valve Nanopillars due to Spin Transfer

2012/02/20 by Hao Yu, Yu, Hao
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Magneto-Optical Properties and Applications #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1202.4218

arxiv created 2012/02/20 · openalex publication_date 2012/02/20 · arxiv updated 2012/02/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report a mechanical effect in spin-valve nanopillars due to spin transfer. A polarized current carrying electron spins transfers torque to local magnetization and leads to a magnetic switching of free layer. Like classical Einstein-de Haas effect, the conservation of angular momentum needs the free layer to offset the change of angular momentum and then a mechanical rotation occurs. The free layer is not free standing, so the mechanical angular momentum will be revealed as stress and strain. We study the effect of a spin induced stress in a nanopillar device with in-plane magnetization. Our calculations show that the tress in as device is dependent on frequency and the ratio of length/thickness and about 1 MPa at GHz. It is concluded that the stress owing to spin transfer is much less than the internal stress of film and does not introduce damage to the device.

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