2021/07/14 by В. Н. Манцевич, Mantsevich, V. N., D. S. Smirnov +1
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2107.06741
openalex publication_date 2021/07/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to the quantum wire with heavy holes is enough to create the 100% spin polarization of a localized light hole. Microscopically, the effect is related with the formation of chiral quasi bound states and the spin dependent tunneling of holes from the quantum wire to the quantum dot. This novel current induced spin polarization mechanism is equally relevant for the GaAs, Si and Ge based semiconductor nanostructures.