Growth of compositionally uniform In_xGa_1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

2024/10/05 by Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc +7
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2410.04206

Abstract

500-nm-thick In_xGa_1-xN layers with x= 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and cathodoluminescence as well as photoluminescence spectroscopy. We demonstrate low degrees of strain relaxation (10% for x=0.12), low threading dislocation densities (\mathrm1×10⁹ cm^-2 for x=0.12), uniform composition both in the growth and lateral direction, and a narrow emission band. The unique sum of excellent materials properties make these layers an attractive basis for the top-down fabrication of ternary nanowires.

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