2022/03/08 by Mahmoud Al Humaidi, Julian Jakob, Humaidi, Mahmoud Al +19
Engineering · Physics and Astronomy · #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Nanowire Synthesis and Applications #Physics of Superconductivity and Magnetism #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2203.04073
openalex publication_date 2022/03/08 · openalex created_date 2022/05/05 · openalex updated_date 2026/07/28
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we are able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a recipe to design NW based devices with length selective strain distribution.