2012/06/19 by Le Thuy Thanh Giang, Lê Thuy Thanh Giang, C. Bougerol +7
Earth and Planetary Sciences · Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci #nanoparticles nucleation surface interactions
paper · pdf · doi:10.48550/arxiv.1206.4274
arxiv created 2012/06/19 · openalex publication_date 2012/06/19 · arxiv updated 2012/06/20 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The maximum axial growth rate; which can be quantified by the supplied rate of As atoms, is achieved when a dynamical equilibrium state is maintained in Ga droplets i.e. the number of impinging As atoms on the droplet surface is equivalent to that of direct deposited Ga atoms combining with the diffusing ones. The contribution of Ga diffusion to the wire growth was evidenced by the diameter-dependent NW axial growth rate.