2024/04/19 by T. Moretti, Matteo Milanesio, Moretti, T. +57
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance
paper · pdf · doi:10.48550/arxiv.2404.12885
openalex publication_date 2024/04/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.