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Control of Graphene Layer Thickness Grown on Plasma Enhanced Atomic Layer Deposition of Molybdenum Carbide

2019/11/12 by Eldad Grady, Grady, Eldad, W. M. M. Kessels +3
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.1911.05001

openalex publication_date 2019/11/12 · openalex created_date 2019/11/22 · openalex updated_date 2026/07/28

Abstract

We show the merits of plasma enhanced atomic layer deposition (PEALD) of catalytic substrate for chemical vapour deposition (CVD) graphene growth. The high quality multilayer graphene (MLG) on molybdenum carbide (MoCx) thin film exhibits excellent uniformity and layer homogeneity over a large area. Moreover, we demonstrate how to achieve control of graphene layers thickness and properties, by varying the specific catalytic film chemical and physical properties. The control of growth is not digital, but is broad ranged from few layer graphene to a graphitic film of ∼75 graphene layers grown on the respective ALD catalytic substrates. Characterisation of the MLG has been performed using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), spectral ellipsometry (SE), and scanning low-energy electron microscopy (SLEEM). By varying MLG thickness in a uniform homogeneous way, we can tailor the desired MLG properties for different application needs. Furthermore, the PEALD process can be readily adapted to high volume manufacturing processes, and combined with existing production lines.

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