A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures

1999/11/27 by V. I. Kozub, Kozub, V. I., N. V. Agrinskaya +6
Engineering · Materials Science · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Surface and Thin Film Phenomena #cond-mat.dis-nn #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/9911450

13 pages, 3 gif-figures

arxiv created 1999/11/27 · openalex publication_date 1999/11/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.

Related

• Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes
• Negative Magnetoresistance in the Nearest-neighbor Hopping Conduction
• Memory effects in ac hopping conductance in the quantum Hall effect regime: Possible manifestation of DX^- centers
• High-Frequency Hopping conductivity of Disordered 2D-system in the IQHE Regime
• Metal-insulator transition in a strongly-correlated two-dimensional electron system