1997/03/06 by X. R. Wang, X. C. Xie, Wang, X. R. +1
Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed Matter (cond-mat) #FOS: Physical sciences #Magnetic properties of thin films #Theoretical and Computational Physics #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9703057
Latex file, no figure
arxiv created 1997/03/06 · openalex publication_date 1997/03/06 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability increases with magnetic field. This is originated from the level crossing in a few-electron cluster. Thus, the overlap of electronic states of two neighboring clusters increases, and the negative magnetoresistance is resulted.