2012/07/30 by Ella Gale, Gale, Ella, Ben de Lacy Costello +3 · 1 citation
Computer Science · Engineering · Materials Science · Neuroscience · Physics and Astronomy · #68.Q.06 #92.E.06 #94.C.06 #Advanced Memory and Neural Computing #B.1.2 #C.1.3 #Chemical Physics (physics.chem-ph) #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Gas Sensing Nanomaterials and Sensors #I.1.3 #I.6.1 #I.6.5 #Materials Science (cond-mat.mtrl-sci) #Photoreceptor and optogenetics research #Transition Metal Oxide Nanomaterials #acm:68.Q.06 #acm:92.E.06 #acm:94.C.06 #cond-mat.mtrl-sci #cs.ET #msc:68.Q.06 #msc:92.E.06 #msc:94.C.06 #physics.chem-ph
paper · pdf · doi:10.48550/arxiv.1207.6928
6 pages, 4 figures, submitted for a conference
arxiv created 2012/07/30 · openalex publication_date 2012/07/30 · arxiv updated 2012/07/31 · openalex created_date 2022/10/01 · openalex updated_date 2026/07/28
Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.