2010/03/15 by Blaise Mouttet, Mouttet, Blaise
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Transition Metal Oxide Nanomaterials #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1003.2842
4 pages
arxiv created 2010/03/15 · openalex publication_date 2010/03/15 · arxiv updated 2010/03/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which attempts to consolidate the memory capacitance effects with the memristor model. The model produces equations relating the cross-sectional area of conductive bridges in resistive switching films to shifts in capacitance.