2016/03/10 by Alexander Khaetskii, Igor Žutić, Khaetskii, Alexander +1
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1603.03410
4 pages, 1 figure
arxiv created 2016/03/10 · openalex publication_date 2016/03/10 · arxiv updated 2016/03/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-dimensional character of the system, given by the ratio of the Fermi energy of electrons and the separation of the electron levels quantized in the growth direction. Our predictions can be tested experimentally and we discuss their implications for semiconductor lasers relying on injection of spin-polarized electrons.