2014/06/19 by L. V. Lutsev, Lutsev, Leonid
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Magnetic properties of thin films
paper · pdf · doi:10.48550/arxiv.1406.5081
The backscattering process of injected electrons on exchange-splitted levels\nof quantum well (QW) in ferromagnetic metal / insulator / semiconductor\nheterostructure is studied. It is found that, if one of the exchange-splitted\nlevels lies in the top region of the QW and the energy of injected electrons is\nclose to the energy of localized electron on this level, the backward\nscattering becomes dependent on spins of injected electrons. Accumulation of\nbackscattered electrons in the QW leads to considerable reduction of the\ncurrent depended on its spin orientation. The spin polarization increases with\ngrowth of the applied electric field and the storage time of electrons in the\nQW. High values of the spin polarization can be achieved at room temperature.\nIn this way, the QW with exchange-splitted levels in ferromagnetic metal /\ninsulator / semiconductor heterostructure can be used as effective spin filter.\n