2001/01/03 by A. P. Mills Jr., A. P. Mills, Mills, A. P. +12
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0101020
arxiv created 2001/01/03 · openalex publication_date 2001/01/03 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x109 cm-2 and at hole temperatures down to 5x10-3 EF. We measure the weak localization corrections to the conductivity g=G/(e2/h) as a function of magnetic field (Delta g=0.019 +/- 0.006 at g=1.5 and T=9 mK) and temperature (d ln g/dT<0.0058 and 0.0084 at g=1.56 and 2.8). These values are less than a few percent of the value 1/pi predicted by standard weak localization theory for a disordered 2D Fermi liquid