2018/07/01 by L. Nicolaï, Lars Nicolai, J. -M. Mariot +37
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Physics of Superconductivity and Magnetism #Superconductivity in MgB2 and Alloys #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1807.00306
7 pages, 7 figures
arxiv created 2018/07/01 · openalex publication_date 2018/07/01 · arxiv updated 2018/07/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a ≈ 10~BL deposit on the A face is identical to that of bulk Bi, while more than ≈ 30 BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.