Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

2023/02/02 by Hadass S. Inbar, Muhammad Zubair, Inbar, Hadass S. +19
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Surface and Thin Film Phenomena #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2302.00803

openalex publication_date 2023/02/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z₂ topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.

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