InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 µm at room-temperature

2009/01/28 by Alban Gassenq, A. Gassenq, G. Boissier +6
Engineering · Physics and Astronomy · Chemistry · #Advanced Semiconductor Detectors and Materials #Semiconductor Quantum Structures and Devices #Spectroscopy and Laser Applications

paper · doi:10.1049/el:20092882

Abstract

Laser diodes based on 4ML InAs/3ML GaSb/1ML InSb/3ML GaSb short-period superlattices (SPSLs) for emission in the 3–3.5 µm wavelength range have been investigated. Lasing is demonstrated up to 300 K in pulsed conditions and up to 200 K under continuous wave operation. Laser emission is centred at ∼3.3 µm, a technologically very important wavelength. The results demonstrate the potential of these new active zones for mid-IR laser diodes.

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