2024/11/27 by Soumyadip Chatterjee, Subhranshu Sekhar Sahu, Chatterjee, Soumyadip +9
Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2411.18175
openalex publication_date 2024/11/27 · openalex created_date 2024/12/05 · openalex updated_date 2026/07/28
Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process conditions. A temperature-dependent study of the luminescence peak positions reveals that samples prepared under certain process conditions exhibit a thermal distribution of carriers from the localized states that show the typical S-shaped dependence in luminescence characteristics. The absence of an S-shaped nature in the other sample prepared with relatively higher In-flux infers a superior homogeneity in alloy composition. Further investigation manifested superior optical properties for the samples where the S-shape nature is found to be absent.