2023/10/02 by Julien Bréhin, Bréhin, Julien, Luis M. Vicente‐Arche +15 · 1 citation
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic Field Sensors Techniques #Magnetic and transport properties of perovskites and related materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Other Condensed Matter (cond-mat.other)
paper · pdf · doi:10.48550/arxiv.2310.01598
openalex publication_date 2023/10/02 · openalex created_date 2023/10/05 · openalex updated_date 2026/08/01
The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO3 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics.