2012/07/01 by José Luís Cardoso, Cardoso, J. L., H. Hernández-Saldaña +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.1207.0251
openalex publication_date 2012/07/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In this work, we show that a gate electric field, applied in the base of the field-effect devices, leads to inducing spin-orbit interactions (Rashba and linear Dresselhauss) and confines the transport electrons in a two-dimensional electron gas. On the basis of these phenomena we solve analytically the Pauli equation when the Rashba strength and the linear Dresselhaus one are equal, for a tuning value of the gate electric field Eg^*. Using the transfer matrix approach, we provide a joint description of the transport by varying the bias electric field, Eb. We can flip the spin of the incident electrons, or block the spin-down completely. The robustness of this behavior is proved when Eg^* changes by Eg^* ± δEg.