Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field

2000/05/23 by V. S. Khrapai, Khrapai, V. S., E. V. Deviatov +5
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0005377

4 pages, 4 figures included; Major changes

arxiv created 2000/09/26 · arxiv updated 2009/11/30

Abstract

We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetoresistance in the metallic phase is found to be positive and weakly anisotropic with respect to the orientation of the in-plane magnetic field and the current through the sample. At low electron densities (n_s< 5× 10¹⁰ cm^-2) the experimental data can be described adequately within spin-related approach while at high n_s the magnetoresistance mechanism changes as inferred from n_s-independence of the normalized magnetoresistance.

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