2014/08/31 by Christian Mayr, Mayr, Christian, Michael Schultz +9
Engineering · #Advanced Memory and Neural Computing #Advancements in Semiconductor Devices and Circuit Design #Emerging Technologies (cs.ET) #FOS: Biological sciences #FOS: Computer and information sciences #Neurons and Cognition (q-bio.NC) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1409.0171
openalex publication_date 2014/08/31 · openalex created_date 2024/04/10 · openalex updated_date 2026/07/28
Generating an exponential decay function with a time constant on the order of hundreds of milliseconds is a mainstay for neuromorphic circuits. Usually, either subthreshold circuits or RC-decays based on transconductance amplifiers are used. In the latter case, transconductances in the 10 pS range are needed. However, state-of-the-art low-transconductance amplifiers still require too much circuit area to be applicable in neuromorphic circuits where >100 of these time constant circuits may be required on a single chip. We present a silicon verified operational transconductance amplifier that achieves a gm of 5 pS in only 700 μm2, a factor of 10-100 less area than current examples. This allows a high-density integration of time constant circuits in target appliations such as synaptic learning or as driving circuit for neuromorphic memristor arrays.