2025/05/07 by Thomas Mayer, Mayer, T., H. Bender +35 · 1 citation
Engineering · Physics and Astronomy · #3D IC and TSV technologies #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Quantum Physics (quant-ph) #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.2505.04337
openalex publication_date 2025/05/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this article, we present a technology development of a superconducting qubit device 3D-integrated by flip-chip-bonding and processed following CMOS fabrication standards and contamination rules on 200 mm wafers. We present the utilized proof-of-concept chip designs for qubit- and carrier chip, as well as the respective front-end and back-end fabrication techniques. In characterization of the newly developed microbump technology based on metallized KOH-etched Si-islands, we observe a superconducting transition of the used metal stacks and radio frequency (RF) signal transfer through the bump connection with negligible attenuation. In time-domain spectroscopy of the qubits we find high yield qubit excitation with energy relaxation times of up to 15 us.