On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode

2006/10/29 by K. M. Indlekofer, Indlekofer, K. M.
Physics and Astronomy · Materials Science · Engineering · #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence #Advanced Materials Characterization Techniques

paper · pdf · doi:10.48550/arxiv.cond-mat/0610806

Abstract

In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.

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