2007/06/14 by Joanna Hass, J. Hass, F. Varchon +21
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0706.2134
5 pages 4 figures
arxiv created 2007/06/14 · openalex publication_date 2007/06/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We examine the stacking order of multilayer graphene grown on the SiC(0001) surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated 30^∘ and ± 2.20^∘ relative to the SiC substrate. These angles are unique because they correspond to commensurate phases of layered graphene, both with itself and with the SiC substrate. \it Ab intio calculations show that these rotational phases electronically decouple adjacent graphene layers. The band structure from graphene at fault boundaries displays linear energy dispersion at the K-point (Dirac cones), nearly identical to that of a single graphene sheet.