Spin-dependent tunneling in the nearly-free-electron model

2006/03/08 by P. Bose, Bose, Peter, Juergen Henk +3
Physics and Astronomy · #Advanced Chemical Physics Studies #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.cond-mat/0603207

openalex publication_date 2006/03/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence. The results are qualitatively explained by the number of incident and transmitted states in the leads. With an extension to ferromagnetic leads the bias dependence of tunnel magneto-resistance is discussed.

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