2012/11/18 by Artur Useinov, Aurélien Manchon, Useinov, A. +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.1211.4196
openalex publication_date 2012/11/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias-dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.