2019/11/19 by Benjamin Klaes, Klaes, Benjamin, R. Lardé +13 · 1 citation
Engineering · Physics and Astronomy · #Advanced Materials Characterization Techniques #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1911.08352
openalex publication_date 2019/11/19 · openalex created_date 2022/07/26 · openalex updated_date 2026/07/28
This article presents a numerical model dedicated to the simulation of field\nion microscopy (FIM). FIM was the first technique to image individual atoms on\nthe surface of a material. By a careful control of the field evaporation of the\natoms from the surface, the bulk of the material exposed, and, through a\ndigitally processing a sequence of micrographs, a three-dimensional\nreconstruction can be achieved. 3DFIM is particularly suited to the direct\nobservation of crystalline defects such as vacancies, interstitials, vacancy\nclusters, dislocations, and any combinations of theses defects that underpin\nthe physical properties of materials. This makes 3DFIM extremely valuable for\nmany material science and engineering applications, and further developing this\ntechnique is becoming crucial. The proposed model enables the simulation of\nimaging artefacts that are induced by non-regular field evaporation and by the\nimpact of the perturbation of the electric field distribution of the distorted\ndistribution of atoms close to defects. The model combines the meshless\nalgorithm for field evaporation proposed by Rolland et al. (Robin-Rolland\nModel, or RRM) with fundamental aspects of the field ionization process of the\ngas image involved in FIM.\n