2025/07/09 by Kishan Kumawat, Md. Afjalur Rahman, Kumawat, Kishan Lal +16
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Nanowire Synthesis and Applications
paper · pdf · doi:10.48550/arxiv.2507.06501
openalex publication_date 2025/07/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Photoelectrochemical photodetectors (PEC-PDs) are promising owing to their simple, low-cost fabrication, self-powered operation, high photoresponse, and environmental sensitivity. In this work, we report for the first time the self-powered PEC photodetection characteristics of nanowire (NW) based green-emitting InGaN/GaN multiple quantum well (MQW) PEC-PDs, fabricated via a scalable top-down approach.The device exhibits strong UV sensitivity with a peak at 365 nm and an extended response into the visible region.Notably, a high photoresponsivity of 330 mA/W was achieved at a lower illumination intensity of 0.7 mW/cm2. Furthermore, the photodetector demonstrates fast, stable, and reproducible performance across varying biases and illumination conditions. These results suggest that InGaN/GaN MQW nanowire-based PEC photodetectors hold strong promise for scalable, efficient, and stable self-powered optoelectronic applications