Analysing digital in-memory computing for advanced finFET node

2021/08/02 by Veerendra S. Devaraddi, Devaraddi, Veerendra S, Joycee Mekie +1
Engineering · #Advanced Memory and Neural Computing #FOS: Computer and information sciences #FOS: Electrical engineering #Ferroelectric and Negative Capacitance Devices #Hardware Architecture (cs.AR) #Semiconductor materials and devices #Systems and Control (eess.SY) #electronic engineering #information engineering

paper · pdf · doi:10.48550/arxiv.2108.00778

openalex publication_date 2021/08/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves accessing multiple SRAM cells simultaneously, which may result in a bit flip when not timed critically. Therefore we discuss the transient voltage characteristics of the bitlines during an SRAM compute. To improve the packaging density and also avoid MOSFET down-scaling issues, we use a 7-nm predictive PDK which uses a finFET node. The finFET process has discrete fins and a lower Voltage supply, which makes the design of in-memory compute SRAM difficult. In this paper, we design a 6T SRAM cell in 7-nm finFET node and compare its SNMs with a UMC 28nm node implementation. Further, we design and simulate the rest of the SRAM peripherals, and in-memory computation for an advanced finFET node.

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