2015/01/24 by Z. Y. Zhang, H. N. Cao, Haining Cao +12 · 1 citation
Materials Science · Physics and Astronomy · #2D Materials and Applications #Band gap #Composite material #Condensed matter physics #Diffraction #FOS: Physical sciences #Ga2O3 and related materials #Geometry #Graphene #Graphene nanoribbons #Graphene research and applications #Materials science #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanotechnology #Optics #Optoelectronics #Orthorhombic crystal system #Physics #Planar #Semiconductor #Strain (injury) #Tensile strain #Ultimate tensile strength #Zigzag #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1501.06044
openalex publication_date 2015/01/24 · arxiv created 2015/02/05 · arxiv updated 2015/02/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crutial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.