Strain-induced asymmetric modulation of band gap in narrow armchair-edge graphene nanoribbon

2015/12/17 by Hui Fang, Feipeng Zhang, Fei-Peng Zhang +5
Materials Science · #Graphene research and applications #2D Materials and Applications #Boron and Carbon Nanomaterials Research

paper · doi:10.1142/s0217984915502243

Abstract

We investigate the band structure of narrow armchair-edge graphene nanoribbons (AGNRs) under tensile strain by means of an extension of the Extended Hückel method. The strain-induced band gap modulation presents asymmetric behavior. The asymmetric modulation of band gap is derived from the different changes of conduction and valence bands near Fermi level under tensile strain. Further analysis suggests that the asymmetric variation of band structure near Fermi level only appear in narrow armchair-edge graphene nanoribbons.

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