2014/12/08 by S. Novikov, N. Lebedeva, Novikov, S. +5
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1412.2590
6 pages, 9 figures, 3 tables
arxiv created 2014/12/08 · arxiv updated 2014/12/09
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metalization process. The tested devices had an initial carrier concentration of (0.6 - 10)*1011 1/cm2 and showed half-integer quantum Hall effect at a relatively low (3 T) magnetic field. Application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance (QHR) in graphene and GaAs devices at moderate magnetic field strengths (<7 T) showed a relative agreement within 6*10-9.