2004/11/11 by F. Kanjouri, Faramarz Kanjouri, Kanjouri, F. +9
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Other Condensed Matter (cond-mat.other) #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.other
paper · pdf · doi:10.48550/arxiv.cond-mat/0411309
7pages, 5 figures
openalex publication_date 2004/11/11 · arxiv created 2004/11/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy. If the position of the impurity inside the barrier is asymmetric, e.g. closer to the one of the interfaces F/I the I-V curve exhibits quasidiode behavior.