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Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime gμB≪ kB T ≪ eV

2014/09/29 by Yang Song, Song, Yang
Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.dis-nn #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.1409.8206

13 pages, correct a typo in Eq.(14) and add an explanation for Eq.(19)

arxiv created 2014/10/12 · arxiv updated 2014/10/14

Abstract

Detailed theoretical derivation is given for the tunnel magnetoresistance via phonon-assisted hopping through an impurity chain under small magnetic field and a large bias window. This derivation provides a rigorous basis for the physical picture of Pauli blockade switch proposed in our previous paper (arXiv:1404.0633). This picture captures the competition of external magnetic field and internal spin interactions in the tunnel barrier, and relies critically on the strong on-site Coulomb correlation at the impurities. The master equations are obtained by deriving the equations of motion for the Green functions at the impurity sites in a slave-boson representation, and utilizing the so-called Langreth theorem to finally express the spin-dependent density matrix in terms of the equilibrium distributions of the contact electrons and of the phonon reservoir.

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