2022/11/01 by N. T. Bagraev, Bagraev , N.T., С. А. Кукушкін +11
Engineering · Materials Science · Physics and Astronomy · #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies
paper · pdf · doi:10.18149/mpm.5012022_5
openalex publication_date 2022/11/01 · openalex created_date 2023/08/29 · openalex updated_date 2026/07/28
The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the coordinated substitution of atoms. In weak magnetic fields, the occurrence of two quantum effects at room temperature was experimentally found: the hysteresis of the static magnetic susceptibility and, in the field dependences, quantum Aharonov-Bohm oscillations of the static magnetic susceptibility. The simultaneous occurrence of these effects is a consequence of two- and one-particle interference of charge carriers (two-dimensional holes) on microdefects consisting of dipole centers with negative correlation energy (negative-U dipole centers).