Macroscopic quantum effects of electromagnetic induction in silicon nanostructures

2022/12/01 by Klyachkin, Leonid, Bagraev, Nikolay, Malyarenko, Anna

paper · doi:10.18149/mpm.5022022_6

Abstract

At room temperature, a macroscopic quantum galvanomagnetic effect of Faraday electromagnetic induction was demonstrated under conditions of the capture of single magnetic flux quanta in the edge channels, confined by chains of negative-U centers, in a silicon nanostructure heavily doped with boron, prepared in Hall geometry on an n-type Si (100) substrate. It is shown that this effect leads to the appearance of an induction current when only a constant magnetic field is applied in the absence of an externally applied voltage or a stabilized current. The experimental dependences of , , and on the magnitude of the external magnetic field in its various directions demonstrate both the Hall staircase of conductivity and the Shubnikov–de Haas oscillations.

Related

• Silicon nanomagnetism
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• Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
• Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires
• Spin transistor effect in edge channels of silicon nanosandwiches