2004/09/10 by Satoshi Sugahara, Sugahara, Satoshi, Tomohiro Matsuno +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0409262
20 pages,4 figures
arxiv created 2004/09/10 · openalex publication_date 2004/09/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization configuration of the ferromagnetic contacts for the source and drain, that is, high current-drive capability in the parallel magnetization and low current-drive capability in the antiparallel magnetization [S. Sugahara and M. Tanaka: Appl. Phys. Lett. 84 (2004) 2307]. A reconfigurable NAND/NOR logic gate can be realized by using a spin MOSFET as a driver or an active load of a complimentary MOS (CMOS) inverter with a neuron MOS input stage. Its logic function can be switched by changing the relative magnetization configuration of the ferromagnetic source and drain of the spin MOSFET. A reconfigurable logic gate for all symmetric Boolean functions can be configured using only five CMOS inverters including four spin MOSFETs. The operation of these reconfigurable logic gates was confirmed by numerical simulations using a simple device model for the spin MOSFETs