2017/11/29 by Seung‐heon Chris Baek, Baek, Seung-heon Chris, Kyung-Woong Park +7 · 1 citation
Materials Science · Engineering · #Electronic and Structural Properties of Oxides #Ferroelectric and Negative Capacitance Devices #Advanced Memory and Neural Computing
paper · pdf · doi:10.48550/arxiv.1711.11172
Spintronic devices as alternatives to traditional semiconductor-based\nelectronic devices attract considerable interest as they offer zero quiescent\npower, built-in memory, scalability, and reconfigurability. To realize\nspintronic logic gates for practical use, a complementary logic operation is\nessential but still missing despite a recent progress in spin-based logic\ndevices. Here, we report the development of a complementary spin logic device\nusing electric-field controlled spin-orbit torque (SOT) switching. In heavy\nmetal/ferromagnet/oxide structures, the critical current for SOT-induced\nswitching of perpendicular magnetization is efficiently modulated by an\nelectric field via voltage-controlled magnetic anisotropy (VCMA) effect in a\nnon-volatile manner. Moreover, the polarity of the VCMA is tuned by the\nmodification of oxidation state at the ferromagnet/oxide interface. This allows\nus to fabricate both n-type and p-type spin logic devices and to enable a\ncomplementary logic operation, paving the way for the development of\nnon-volatile and reconfigurable logic devices.\n