Radiation hardness study using SiPMs with single-cell readout

2021/10/31 by Garutti, E., Popova, E., Parygin, P. +5
#FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det)

paper · doi:10.48550/arxiv.2111.00483

Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Φ = 5e13 cm^-2. The cell has a pitch of 15 μm. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of V_off by ≈0.5 V is observed after Φ = 5e13 cm^-2.

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