2010/11/22 by I. I. Boiko, Boiko, I. I.
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1011.4904
8 pages, 5 figures
arxiv created 2010/11/22 · arxiv updated 2010/11/23
Conductivity of p-Si and p-Ge is considered for two band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes drift velocity of light holes and, as result, the total conductivity of crystal. Considered here drag-effect appears as well in the form of nonmonotonous dependences of conductivity on temperature and carrier density.