High-field transport properties of bulk Si: A test for the Fokker-Planck approach

1999/09/16 by F. Comas, Comas, F., Nélson Studart +2
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Semiconductor materials and interfaces #Thermal properties of materials #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/9909253

4 pages, 3 figures

arxiv created 1999/09/16 · arxiv updated 2009/11/30

Abstract

High electric-field transport parameters are calculated using an analytical Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion process in energy space. We have applied the theory to the case of Si, taking into account the six intervalley phonons, aiming to test the FPA. The obtained results show a quite reasonable agreement with experimental data and Monte Carlo simulations confirming in this case that the FPA works very well for high enough electric fields.

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