2016/06/28 by Jianan Li, Li, Jianan, Jen‐Feng Hsu +27 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Electron mobility #FOS: Physical sciences #Fiber-reinforced polymer composites #Graphene #Materials Science (cond-mat.mtrl-sci) #Materials science #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanotechnology #Optoelectronics #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1606.08802
published in arXiv (Cornell University) (Cornell University) · 6 pages, 4 figures
arxiv created 2016/06/28 · openalex publication_date 2016/06/28 · arxiv updated 2016/06/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO3/SrTiO3 heterostructures is atomically clean, with high mobility (~30,000 cm2V-1s-1) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO3/SrTiO3 interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.