2002/08/20 by Wei Cheng, Cheng, Wei, Shang-Fen Ren +1
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0208395
11 pages, 5 figures
arxiv created 2002/08/20 · openalex publication_date 2002/08/20 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.