2003/07/27 by Nguyen Hong Quang, Nguyễn Hồng Quang, Tran The Trung +7
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0307664
19 pages, 10 figures
arxiv created 2003/07/27 · openalex publication_date 2003/07/27 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present an exact calculation of the single-electron energies and wave-functions for any bound state in a realistic Si-SiO2 spherical quantum dot, including the material dependence of the electron effective mass. The influence of dot radius, confinement barrier potential and barrier-to-dot electron mass ratio on the electronic structure is investigated in detail. The results show that the energy structure shifts down from some tens to some hundreds meV compared to that obtained in the simplified model where the change in effective mass is neglected. Our exact single-electron calculation is finally used to verify the accuracy of the results obtained from a numerical approximate method developed to treat many-electron systems.