2013/03/13 by D. V. Kazantsev, Dmitry Kazantsev, Kazantsev, Dmitry
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Optics (physics.optics) #Silicon Carbide Semiconductor Technologies #Silicon Nanostructures and Photoluminescence #Thin-Film Transistor Technologies #physics.optics
paper · pdf · doi:10.48550/arxiv.1303.3175
arxiv created 2013/03/13 · openalex publication_date 2013/03/13 · arxiv updated 2013/03/14 · openalex created_date 2022/10/01 · openalex updated_date 2026/07/28
The apertureless SNOM mapping of the slightly-doped 4H-SiC epitaxial layer grown on a heavily-doped 4H-SiC substrate was performed with a cleaved edge geometry. ASNOM images taken at the light frequencies of a C13O216 laser show a clear contrast between the substrate and the epitaxial layer. The contrast vanishes at the laser frequency of 884cm-1, and gets clearer at higher frequencies (923cm-1). This can be explained by changes in the local polarizability of SiC caused by the carrier concentration, which are more pronounced at higher frequencies. Since the light frequency is tuned up further (935cm-1), a transversal mode structure appears in the ASNOM map, indicating a waveguide-like confinement of a surface phonon polariton wave inside the strip of an epi-layer outcrop.