2010/10/20 by B. K. Daas, Daas, B. K., Kevin M. Daniels +5
Engineering · Materials Science · #Thermal Radiation and Cooling Technologies #Graphene research and applications #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.1010.4080
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses.