2009/08/17 by Marta Prada, M. Prada, Gerhard Klimeck +6 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.0908.2417
9 pages, 9 figures
arxiv created 2009/08/17 · openalex publication_date 2009/08/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic modeling tool, NEMO-3D. We describe the relevant parameters as a function of applied electric field and well width in our numerical simulations. For a silicon membrane, we find the bulk Rashba parameter to be linear in field, α= α1Ez with α1 ≃ 2× 10 -5nm-2. The dominant contribution to the spin-orbit splitting is from Dresselhaus-type terms, and the magnitude for a typical flat SiGe/Si/SiGe quantum well can be as high as 1μeV.